Updated on 2024/12/26

写真a

 
TATSUYA Honma
 
Organization
School of Medicine General Education Physics
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Degree

  • 博士(工学) ( 1993.3   北海道大学 )

Research Interests

  • high-Tc superconductor

  • high pressure effect

  • transport property

  • 高温超伝導

  • 高圧効果

  • 輸送現象

  • High-Temperature Cuprate Superconductor

Research Areas

  • Natural Science / Magnetism, superconductivity and strongly correlated systems

Education

  • Hokkaido University   Graduate School, Division of Engineering

    - 1993.3

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    Country: Japan

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  • Hokkaido University

    - 1993

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    Country: Japan

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  • Hokkaido University   Graduate School, Division of Engineering

    - 1993

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  • Hokkaido University   Faculty of Engineering

    - 1988.3

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    Country: Japan

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  • Hokkaido University   School of Engineering   Department of Nuclear Engineering

    - 1988

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    Country: Japan

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  • Hokkaido University   Faculty of Engineering

    - 1988

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Research History

  • Texas Center for Superconductivity, University of Houston   Nobel Material Research Group   Visiting researcher

    2013.7 - 2013.8

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2012.8

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  • Asahikawa Medical College

    2012.4 - 2014.3

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  • Asahikawa Medical College

    2012.4 - 2013.6

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2011.7 - 2011.8

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  • Asahikawa Medical College

    2009.4 - 2011.3

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  • Asahikawa Medical College   Professor

    2008.4

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  • - 旭川医科大学医学部 教授

    2008

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  • - Professor, Faculty of Medicne, Asahikawa Medical College

    2008

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  • Asahikawa Medical College   Associate Professor

    2007.11 - 2008.3

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  • Asahikawa Medical College   Associate Professor

    2007.4 - 2008.3

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2006.7 - 2006.8

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2005.7 - 2005.8

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2005.3 - 2005.4

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2003.7 - 2003.9

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  • Asahikawa Medical College   School of Medicine   Associate Professor (as old post name)

    2003.4 - 2007.3

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  • - Associate professor, Faculty of Medicne, Asahikawa Medical College

    2003

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    2000.7 - 2000.9

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    1999.11 - 2000.4

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    1999.7 - 1999.9

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    1998.10 - 1999.4

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  • 米国ヒューストン大学テキサス超伝導センター   客員研究員

    1998.7 - 2000.9

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  • 米国ヒューストン大学テキサス超伝導センター客員研究員

    1998 - 2000

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1997.12

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1997.9

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1997.1 - 1997.2

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1996.12

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1995.11 - 1995.12

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1995.1 - 1995.2

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  • Asahikawa Medical College   School of Medicine   Lecturer

    1993.4 - 2003.3

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1993.1 - 1993.2

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  • - Asistant Professor, Faculty of Medicne, Asahikawa

    1993

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1992.8 - 1992.9

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  • 東京大学附属物性研究所   超高圧部門   外来研究員

    1991.10 - 1992.3

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  • Medical College

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Professional Memberships

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Papers

  • Anisotropic magnetoresistance in quasi-one dimensional conductor o-TaS<sub>3</sub>, II

    Inagaki K., Matsuura T., Tsubota M., Uji S., Honma T., Tanda S.

    Meeting Abstracts of the Physical Society of Japan   72 ( 0 )   1731 - 1731   2017

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.72.1.0_1731

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  • Quantitative connection between the nanoscale electronic inhomogeneity and the pseudogap of Bi2Sr2CaCu2O8+delta superconductors Reviewed

    Tatsuya Honma, Pei Herng Hor

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   509   11 - 15   2015.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    We have found a quantitative connection between the evolution of the inhomogeneous nanoscale electronic gaps (INSEG) state detected in Bi2Sr2CaCu2O8+delta by scanning tunneling microscopy/spectroscopy (STM/S) and the two universal, the upper and the lower, pseudogaps in high-temperature cuprate superconductors (HTCS). When the doping and temperature dependent INSEG map were analyzed by using our proposed hole-scale, we find that the two pseudogaps are connected to two specific coverages of the CuO2 plane by INSEG: the 50% and 100% coverages of the CuO2 planes by INSEG correspond to the upper and lower pseudogaps, respectively. This quantitative connection to the two pseudogaps indicates that the origin of the measured pseudogap energies and temperatures are intimately related to the geometrical coverage of the CuO2 planes by the INSEG state. We find that INSEG and superconductivity coexist in the underdoped to the overdoped regimes. We suggest that pseudogap states are microscopically inhomogeneous and 100% coverage of the CuO2 planes by the INSEG is a necessary condition for the high-T-c superconductivity. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2014.12.003

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  • On the quantitative determination of hole-concentration in high-temperature cuprate superconductors Invited Reviewed

    Tatsuya Honma, Pei-Herng Hor

    International Journal of Modern Physics B   29   1542029-1 - 1542029-11   2015

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    We compared four hole-scales that have been used to determine the hole-concentration in high-temperature cuprate superconductors. We show that the hole-scale, Ppl-scale, based on the thermoelectric power [T. Honma et al., Phys. Rev. B 70 (2004) 214517.] is quantitatively consistent with spectroscopic probes for many different cuprate materials, while the other hole-scales, based on a dome-shaped Tc-curve [M. R. Presland et al., Physica (Amsterdam) C 176 95 (1991)], the c-axis lattice parameter [R. Liang et al., Phys. Rev. B 73 (2006) 180505(R).] and Hall coefficient [Y. Ando et al., Phys. Rev. B 61 (2000) 14956(R).], are not. We show that the quantitatively different hole-scales resulted in opposite conclusion of the same experimental observations. It can also lead to different interpretations of the electronic phase diagram when comparing different physical properties in different high-Tc systems. We suggest that the Ppl-scale is the correct universal scale that works for all high-Tc cuprates and it should be used for all quantitative doping dependence studies of cuprates.

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  • Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors Reviewed

    Tatsuya Honma, Pei-Herng Hor

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   471 ( 17-18 )   537 - 543   2011.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of high-temperature superconductivity. Here, we present a true intrinsic and universal doping dependence of in-plane dc conductivity for all underdoped HTCSs. The doping dependence of in-plane dc conductivity normalized to that at optimal doping can be represented by a simple exponential formula. The doping behavior of the square of the nodal Fermi velocity derived by the high-resolution laser-based angle-resolved photoemission spectroscopy in the superconducting state follows reasonably well the universal intrinsic doping behavior. Our findings suggest a commonality of the low-energy quasiparticles both in the normal and superconducting states that place a true universal and stringent constraint on the mechanism of high-temperature superconductivity for HTCSs. (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2011.05.244

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  • Unified electronic phase diagram for hole-doped high-T-c cuprates Reviewed

    T. Honma, P. H. Hor

    PHYSICAL REVIEW B   77 ( 18 )   2008.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AMER PHYSICAL SOC  

    We have analyzed various characteristic temperatures and energies of hole-doped high-T-c cuprates as a function of a dimensionless hole-doping concentration (p(u)). Entirely based on the experimental grounds, we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T*(,)s) and their corresponding energies (E*(,)s) converge as pu increases in the underdoped regime. T*(,)s and E's merge together with the T-c curve and 3.5k(B)T(c) curve at p(u) similar to 1.1 in the overdoped regime, respectively. They finally go to zero at p(u) similar to 1.3. The UEPD follows an asymmetric half-dome-shaped T-c curve, in which T-c appears at p(u) similar to 0.4, reaches a maximum at p(u) similar to 1, and rapidly goes to zero at p(u) similar to 1.3. The asymmetric half-dome-shaped T-c curve is at odds with the well-known symmetric superconducting dome for La2-xSrxCuO4 (SrD-La214), in which two characteristic temperatures and energies converge as p(u) increases and merge together at p(u) similar to 1.6, where T-c goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high-T-c cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost. all high-T-c cuprate materials and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high-T, superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase.

    DOI: 10.1103/PhysRevB.77.184520

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  • Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-T-c superconductors Reviewed

    Tatsuya Honma, Pei Herng Hor

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   460   809 - 810   2007.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:ELSEVIER SCIENCE BV  

    We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration (P-pl) or an effective three-dimensional hole-doping concentration (P-3D), We find that superconducting transition temperature (T-c) exhibits a universal dome-shaped behavior in the T,, vs. P-3D plot with a universal optimal doping concentration at P-3D similar to 1.6 x 10(21) cm(-3) for the single-layer high temperature superconductors. (c) 2007 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2007.04.079

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  • Intrinsic tendency of electronic phase separation into two superconducting states in (formula presented) Reviewed

    B. Lorenz, Z. G. Li, T. Honma, P. H. Hor

    Physical Review B - Condensed Matter and Materials Physics   65 ( 14 )   1 - 11   2002

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    The effect of hydrostatic pressure up to 2 GPa on the superconductiong transitions in (formula presented) is investigated. The ambient- and high-pressure properties of two series of samples with (formula presented) and 0.015 and (formula presented) are characterized and compared by ac-susceptibility measurements. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total hole concentration (formula presented) For (formula presented) there is a single superconducting transition (formula presented) with an unusually large pressure coefficient, (formula presented) At a higher hole density (formula presented) a second superconducting transition (formula presented) follows the first transition upon cooling and the pressure shift of this transition is negative, (formula presented) At the boundary as the hole density is close to 0.085 the phase separation can be induced by pressure. The results are explained in terms of a strong correlation of the interstitial oxygen with the hole system in the CuO planes. Pressure, applied at ambient temperature, causes a redistribution of holes. The mobile oxygen dopants follow and enhance (formula presented) as well as the tendency toward phase separation. If pressure is changed at low temperature (formula presented) the effects on (formula presented) and phase separations are greatly diminished because the interstitial oxygen becomes immobile at low T. Our results indicate that the dopant effects are important. Dopants and holes should be treated as a single globally correlated state. When thermodynamic euqilibrium is approached in the oxygen-doped samples, we find that there is an intrinsic tendency of electronic phase separation of doped holes into two distinct superconducting states. © 2002 The American Physical Society.

    DOI: 10.1103/PhysRevB.65.144522

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MISC

  • Anisotropic magnetoresistance of charge-density wave in o-TaS3

    Katsuhiko Inagaki, Toru Matsuura, Masakatsu Tsubota, Shinya Uji, Tatsuya Honma, Satoshi Tanda

    PHYSICAL REVIEW B   93 ( 7 )   2016.2

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    Language:English   Publishing type:Internal/External technical report, pre-print, etc.   Publisher:AMER PHYSICAL SOC  

    We report the magnetoresistance of a charge-density wave (CDW) in o-TaS3 whiskers at 4.2 K under a magnetic field up to 5.2 T. An anisotropic negative magnetoresistance was found in the nonlinear regime of current-voltage characteristics. The angle dependence of the magnetoresistance, studied by rotating the magnetic field upon the c axis, exhibited a twofold symmetry. The magnetoresistance amplitude exhibited maxima when the field was parallel to the a axis, whereas it vanished to the b axis. The observed anisotropy may come from a difference in interchain coupling of adjacent CDWs along the a and b axes. Comparison of the anisotropy to the scanning tunneling microscope image of CDWs allows us to provide a simple picture to explain the magnetoresistance in terms of delocalization of quantum interference of CDWs extending over the b-c plane.

    DOI: 10.1103/PhysRevB.93.075423

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  • Universal scaling of the c-axis dc conductivity for underdoped high-temperature cuprate superconductors

    T. Honma, P. H. Hor

    SOLID STATE COMMUNICATIONS   150 ( 47-48 )   2314 - 2317   2010.12

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    Language:English   Publisher:PERGAMON-ELSEVIER SCIENCE LTD  

    The coexistence of 'metallic-like' in-plane dc conductivity and 'semiconducting-like' out-of-plane (c-axis) dc conductivity (sigma(c)), generating huge anisotropy in underdoped high-temperature cuprate superconductors (HTCSs), defies our current understanding of metals. In this report, we present an intrinsic doping dependence of sigma(c). We find that sigma(c) for underdoped HTCSs is universally scaled to the sigma(c) value at the optimal doped-hole concentration. The universal scaling behavior suggests that there are three intrinsic processes that contribute to sigma(c): (i) the doping-dependent-activated gap; (ii) the exponential doping dependences, and (iii) the tunneling between adjacent CuO2 block layers. They are the essential underlying characteristics of the c-axis transport for all HTCSs. (C) 2010 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.ssc.2010.10.003

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  • Comparison of the hole concentration determined by transport measurement for the hole-doped cuprate superconductors

    Tatsuya Honma, Pei Herng Hor

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   470   S191 - S192   2010.12

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    Language:English   Publisher:ELSEVIER SCIENCE BV  

    We have compared the hole concentration (P-pl) determined by hole-scale based on the thermoelectric power at RT (S-290) to the hole concentrations (P) determined by two popular hole-scales based on the superconducting critical temperature (T-c) and Hall coefficient (R-H). While the hole concentrations based on different hole-scales are different, we show that when the P-pl is divided by either the effective unit cell volume (V-euc) which is the unit cell volume per one CuO2 plane or the optimal hole concentration (P-pl(opt)) we can find some correlation between P-pl and P. That is, the normalized T-c(T-c/T-c(P-pl(opt))) and the Hall number (1/eR(H)) are well scaled with P-pl/P-pl(opt) and P-pl/V-euc, respectively. We find that the P-pl-scale can map to and reproduce the other two hole-scales if proper dimensionality and normalization are taken into account but not vice versa. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2009.11.050

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  • Comparison of the hole concentration determined by transport measurement for the hole-doped cuprate superconductors

    Tatsuya Honma, Pei Herng Hor

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   470   S191 - S192   2010.12

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    Language:English   Publisher:ELSEVIER SCIENCE BV  

    We have compared the hole concentration (P-pl) determined by hole-scale based on the thermoelectric power at RT (S-290) to the hole concentrations (P) determined by two popular hole-scales based on the superconducting critical temperature (T-c) and Hall coefficient (R-H). While the hole concentrations based on different hole-scales are different, we show that when the P-pl is divided by either the effective unit cell volume (V-euc) which is the unit cell volume per one CuO2 plane or the optimal hole concentration (P-pl(opt)) we can find some correlation between P-pl and P. That is, the normalized T-c(T-c/T-c(P-pl(opt))) and the Hall number (1/eR(H)) are well scaled with P-pl/P-pl(opt) and P-pl/V-euc, respectively. We find that the P-pl-scale can map to and reproduce the other two hole-scales if proper dimensionality and normalization are taken into account but not vice versa. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2009.11.050

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  • Universal scaling of the c-axis dc conductivity for underdoped high-temperature cuprate superconductors

    T. Honma, P. H. Hor

    SOLID STATE COMMUNICATIONS   150 ( 47-48 )   2314 - 2317   2010.12

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    Language:English   Publisher:PERGAMON-ELSEVIER SCIENCE LTD  

    The coexistence of 'metallic-like' in-plane dc conductivity and 'semiconducting-like' out-of-plane (c-axis) dc conductivity (sigma(c)), generating huge anisotropy in underdoped high-temperature cuprate superconductors (HTCSs), defies our current understanding of metals. In this report, we present an intrinsic doping dependence of sigma(c). We find that sigma(c) for underdoped HTCSs is universally scaled to the sigma(c) value at the optimal doped-hole concentration. The universal scaling behavior suggests that there are three intrinsic processes that contribute to sigma(c): (i) the doping-dependent-activated gap; (ii) the exponential doping dependences, and (iii) the tunneling between adjacent CuO2 block layers. They are the essential underlying characteristics of the c-axis transport for all HTCSs. (C) 2010 Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.ssc.2010.10.003

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  • Unified electronic phase diagram for hole-doped high- Tc cuprates

    T. Honma, P. H. Hor

    Physical Review B - Condensed Matter and Materials Physics   77 ( 18 )   184520   2008.5

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    We have analyzed various characteristic temperatures and energies of hole-doped high- Tc cuprates as a function of a dimensionless hole-doping concentration (pu). Entirely based on the experimental grounds, we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T 's) and their corresponding energies (E 's) converge as pu increases in the underdoped regime. T 's and E 's merge together with the Tc curve and 3.5 kB Tc curve at pu ∼1.1 in the overdoped regime, respectively. They finally go to zero at pu ∼1.3. The UEPD follows an asymmetric half-dome-shaped Tc curve, in which Tc appears at pu ∼0.4, reaches a maximum at pu ∼1, and rapidly goes to zero at pu ∼1.3. The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-x Srx CuO4 (SrD-La214), in which two characteristic temperatures and energies converge as pu increases and merge together at pu ∼1.6, where Tc goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high- Tc cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost all high- Tc cuprate materials and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high- Tc superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase. © 2008 The American Physical Society.

    DOI: 10.1103/PhysRevB.77.184520

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  • Unified electronic phase diagram for hole-doped high- Tc cuprates

    T. Honma, P. H. Hor

    Physical Review B - Condensed Matter and Materials Physics   77 ( 18 )   184520   2008.5

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    Language:English  

    We have analyzed various characteristic temperatures and energies of hole-doped high- Tc cuprates as a function of a dimensionless hole-doping concentration (pu). Entirely based on the experimental grounds, we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T 's) and their corresponding energies (E 's) converge as pu increases in the underdoped regime. T 's and E 's merge together with the Tc curve and 3.5 kB Tc curve at pu ∼1.1 in the overdoped regime, respectively. They finally go to zero at pu ∼1.3. The UEPD follows an asymmetric half-dome-shaped Tc curve, in which Tc appears at pu ∼0.4, reaches a maximum at pu ∼1, and rapidly goes to zero at pu ∼1.3. The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-x Srx CuO4 (SrD-La214), in which two characteristic temperatures and energies converge as pu increases and merge together at pu ∼1.6, where Tc goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high- Tc cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost all high- Tc cuprate materials and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high- Tc superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase. © 2008 The American Physical Society.

    DOI: 10.1103/PhysRevB.77.184520

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  • Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa2Cu3O6+delta

    T. Honma, P. H. Hor

    PHYSICAL REVIEW B   75 ( 1 )   012508   2007.1

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    We study superconducting transition temperature (T-c) of oxygen-doped double-layer high-temperature superconductors YBa2Cu3O6+delta (0 &lt;=delta &lt;= 1) as a function of the oxygen dopant concentration (delta) and planar hole-doping concentration (P-pl). We find that T-c, while clearly influenced by the development of the chain ordering as seen in the T-c vs delta plot, lies on a universal curve originating at the critical hole concentration (P-c)=1/16 in the T-c vs P-pl plot. Our analysis suggests that the universal behavior of T-c(P-pl) can be understood in terms of the competition and collaboration of chemical phases and electronic phases that exist in the system. We conclude that the global superconductivity behavior of YBa2Cu3O6+delta as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on P-c, such as 2xP(c), 3xP(c), and 4xP(c). We find that there are at least two intrinsic electronic superconducting phases of T-c=60 K at 2xP(c)=1/8 and T-c=90 K at 3xP(c)=3/16.

    DOI: 10.1103/PhysRevB.75.012508

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  • Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa2Cu3O6+delta

    T. Honma, P. H. Hor

    PHYSICAL REVIEW B   75 ( 1 )   012508   2007.1

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    Language:English   Publisher:AMERICAN PHYSICAL SOC  

    We study superconducting transition temperature (T-c) of oxygen-doped double-layer high-temperature superconductors YBa2Cu3O6+delta (0 &lt;=delta &lt;= 1) as a function of the oxygen dopant concentration (delta) and planar hole-doping concentration (P-pl). We find that T-c, while clearly influenced by the development of the chain ordering as seen in the T-c vs delta plot, lies on a universal curve originating at the critical hole concentration (P-c)=1/16 in the T-c vs P-pl plot. Our analysis suggests that the universal behavior of T-c(P-pl) can be understood in terms of the competition and collaboration of chemical phases and electronic phases that exist in the system. We conclude that the global superconductivity behavior of YBa2Cu3O6+delta as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on P-c, such as 2xP(c), 3xP(c), and 4xP(c). We find that there are at least two intrinsic electronic superconducting phases of T-c=60 K at 2xP(c)=1/8 and T-c=90 K at 3xP(c)=3/16.

    DOI: 10.1103/PhysRevB.75.012508

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  • Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

    T. Honma, P. H. Hor

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   19 ( 9 )   907 - 911   2006.9

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    We argue that in cuprate physics there are two types, hole content per CuO2 plane ( P-p1) and the corresponding hole content per unit volume ( P-3D), of hole-doping concentrations for addressing physical properties that are two dimensional ( 2D) and three dimensional ( 3D) in nature, respectively. We find that the superconducting transition temperature ( T-c) varies systematically with P-3D as a superconducting 'dome' with a universal optimal hole-doping concentration of P opt 3D = 1.6 x 10(21) cm(-3) for single-layer high-temperature superconductors. We suggest that P opt 3D determines the upper bound of the electronic energy of underdoped single-layer high-T-c cuprates.

    DOI: 10.1088/0953-2048/19/9/004

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  • Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

    T. Honma, P. H. Hor

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   19 ( 9 )   907 - 911   2006.9

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    We argue that in cuprate physics there are two types, hole content per CuO2 plane ( P-p1) and the corresponding hole content per unit volume ( P-3D), of hole-doping concentrations for addressing physical properties that are two dimensional ( 2D) and three dimensional ( 3D) in nature, respectively. We find that the superconducting transition temperature ( T-c) varies systematically with P-3D as a superconducting 'dome' with a universal optimal hole-doping concentration of P opt 3D = 1.6 x 10(21) cm(-3) for single-layer high-temperature superconductors. We suggest that P opt 3D determines the upper bound of the electronic energy of underdoped single-layer high-T-c cuprates.

    DOI: 10.1088/0953-2048/19/9/004

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  • Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductor Reviewed

    T. Honma, P. H. Hor

    Supercond.ucting Science & Technology   19 ( 9 )   907 - 911   2006.4

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    DOI: 10.1088/0953-2048/19/9/004

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  • Universal intrinsic scale of the hole concentration in high-T-c cuprates

    T Honma, PH Hor, HH Hsieh, M Tanimoto

    PHYSICAL REVIEW B   70 ( 21 )   2004.12

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    We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer P-pl in Y1-xCaxBa2Cu3O6 (P-pl=x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of P-pl, S-290(P-pl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (P-pl=z). We argue that S-290(P-pl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the P-pl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the formal valency of Cu. We find two characteristic scaling temperatures, T-S(*) and T-S2(*), in the TEP versus temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of P-pl fall on two common curves; lower pseudogap temperature defined by the T-S(*) versus P-pl curve and upper pseudogap temperature defined by the T-S2(*) versus P-pl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-T-c cuprates, T-c depends on the number of layers, therefore, the inter layer coupling, in each individual system.

    DOI: 10.1103/PhysRevB.70.214517

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  • Universal intrinsic scale of the hole concentration in high-T-c cuprates

    T Honma, PH Hor, HH Hsieh, M Tanimoto

    PHYSICAL REVIEW B   70 ( 21 )   214517-1~214517-10   2004.12

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    We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer P-pl in Y1-xCaxBa2Cu3O6 (P-pl=x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of P-pl, S-290(P-pl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (P-pl=z). We argue that S-290(P-pl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the P-pl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the formal valency of Cu. We find two characteristic scaling temperatures, T-S(*) and T-S2(*), in the TEP versus temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of P-pl fall on two common curves; lower pseudogap temperature defined by the T-S(*) versus P-pl curve and upper pseudogap temperature defined by the T-S2(*) versus P-pl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-T-c cuprates, T-c depends on the number of layers, therefore, the inter layer coupling, in each individual system.

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  • Pseudogap and superconductivity on a common scale of hole concentration for high-T-c superconductors

    T Honma, PH Hor, HH Hsieh, M Tanimoto

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   408   670 - 671   2004.8

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    Room-temperature thermoelectric power S-290 as a function of hole concentration per planer Cu atom (P-pl) has been studied in a chain-free double-layer Y1-xCaxBa2Cu3O6. S-290 (P-p1) of Y1-xCa2Ba2Cu3O6 (P-pl = x/2) behaves identically to that of single-layer La2-xSrxCuO4 (P-pl = x). In order to show the validity of the present scale of S-290(P-pl), we demonstrate the phase diagram for bilayer YBa2Cu3Oy system and Bi2Sr2CaCu2Oy system and discuss. (C) 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2004.03.103

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  • Pseudogap and superconductivity on a common scale of hole concentration for high-T-c superconductors

    T Honma, PH Hor, HH Hsieh, M Tanimoto

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   408   670 - 671   2004.8

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    Room-temperature thermoelectric power S-290 as a function of hole concentration per planer Cu atom (P-pl) has been studied in a chain-free double-layer Y1-xCaxBa2Cu3O6. S-290 (P-p1) of Y1-xCa2Ba2Cu3O6 (P-pl = x/2) behaves identically to that of single-layer La2-xSrxCuO4 (P-pl = x). In order to show the validity of the present scale of S-290(P-pl), we demonstrate the phase diagram for bilayer YBa2Cu3Oy system and Bi2Sr2CaCu2Oy system and discuss. (C) 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.physc.2004.03.103

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  • Critical temperature oscillation in the thermal cycle below 16 K in Y0.83Ca0.17Ba2Cu3O6

    T Honma, PH Hor, M Tanimoto

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   388   373 - 374   2003.5

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    In an Y0.83Ca0.17Ba2Cu3O6 polycrystalline sample, under thermal cycling below 16 K, an unusual relaxation effect of the superconducting resistive transition has been observed after the pressure is changed at RT. The normal-state resistivity does not change. Since there is no mobile oxygen in the present sample, the effect of oxygen rearrangement can be ignored. The observed results can be understood by the charge redistribution within the CuO2 planes. (C) 2003 Elsevier Science B.V. All rights reserved.

    DOI: 10.1016/S0921-4534(02)02513-3

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  • Critical temperature oscillation in the thermal cycle below 16 K in Y0.83Ca0.17Ba2Cu3O6

    T Honma, PH Hor, M Tanimoto

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   388   373 - 374   2003.5

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    In an Y0.83Ca0.17Ba2Cu3O6 polycrystalline sample, under thermal cycling below 16 K, an unusual relaxation effect of the superconducting resistive transition has been observed after the pressure is changed at RT. The normal-state resistivity does not change. Since there is no mobile oxygen in the present sample, the effect of oxygen rearrangement can be ignored. The observed results can be understood by the charge redistribution within the CuO2 planes. (C) 2003 Elsevier Science B.V. All rights reserved.

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  • Intrinsic tendency of electronic phase separation into two superconducting states in La2-xSrxCuO4+delta

    B Lorenz, ZG Li, T Honma, PH Hor

    PHYSICAL REVIEW B   65 ( 14 )   2002.4

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    The effect of hydrostatic pressure up to 2 GPa on the superconductiong transitions in La2-xSrxCuO4+delta is investigated. The ambient- and high-pressure properties of two series of samples with x=0 and 0.015 and 0&lt;&delta;&lt;0.1 are characterized and compared by ac-susceptibility measurements. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total hole concentration n(h). For n(h)&lt;0.085 there is a single superconducting transition (T-c&AP;30 K) with an unusually large pressure coefficient, dT(c)((30))/dpapproximate to10 K/GPa. At a higher hole density (n(h)&gt;0.085) a second superconducting transition (T(c)approximate to15 K) follows the first transition upon cooling and the pressure shift of this transition is negative, dT(c)((15))/dpapproximate to-4 K/GPa. At the boundary as the hole density is close to 0.085 the phase separation can be induced by pressure. The results are explained in terms of a strong correlation of the interstitial oxygen with the hole system in the CuO planes. Pressure, applied at ambient temperature, causes a redistribution of holes. The mobile oxygen dopants follow and enhance T-c as well as the tendency toward phase separation. If pressure is changed at low temperature (&lt;100 K) the effects on T-c and phase separations are greatly diminished because the interstitial oxygen becomes immobile at low T. Our results indicate that the dopant effects are important. Dopants and holes should be treated as a single globally correlated state. When thermodynamic euqilibrium is approached in the oxygen-doped samples, we find that there is an intrinsic tendency of electronic phase separation of doped holes into two distinct superconducting states.

    DOI: 10.1103/PhysRevB.65.144522

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  • Intrinsic tendency of electronic phase separation into two superconducting states in La2-xSrxCuO4+delta

    B Lorenz, ZG Li, T Honma, PH Hor

    PHYSICAL REVIEW B   65 ( 14 )   2002.4

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    The effect of hydrostatic pressure up to 2 GPa on the superconductiong transitions in La2-xSrxCuO4+delta is investigated. The ambient- and high-pressure properties of two series of samples with x=0 and 0.015 and 0&lt;&delta;&lt;0.1 are characterized and compared by ac-susceptibility measurements. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total hole concentration n(h). For n(h)&lt;0.085 there is a single superconducting transition (T-c&AP;30 K) with an unusually large pressure coefficient, dT(c)((30))/dpapproximate to10 K/GPa. At a higher hole density (n(h)&gt;0.085) a second superconducting transition (T(c)approximate to15 K) follows the first transition upon cooling and the pressure shift of this transition is negative, dT(c)((15))/dpapproximate to-4 K/GPa. At the boundary as the hole density is close to 0.085 the phase separation can be induced by pressure. The results are explained in terms of a strong correlation of the interstitial oxygen with the hole system in the CuO planes. Pressure, applied at ambient temperature, causes a redistribution of holes. The mobile oxygen dopants follow and enhance T-c as well as the tendency toward phase separation. If pressure is changed at low temperature (&lt;100 K) the effects on T-c and phase separations are greatly diminished because the interstitial oxygen becomes immobile at low T. Our results indicate that the dopant effects are important. Dopants and holes should be treated as a single globally correlated state. When thermodynamic euqilibrium is approached in the oxygen-doped samples, we find that there is an intrinsic tendency of electronic phase separation of doped holes into two distinct superconducting states.

    DOI: 10.1103/PhysRevB.65.144522

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  • Competition between oxygen reordering and internal strain for the pressure effect of the Hall coefficient in Y1-xCaxBa2Cu3Oy - art. no. 2125065

    T Honma, M Tanimoto, N Mori

    PHYSICAL REVIEW B   63 ( 21 )   2001.6

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    The pressure effect on the Hall coefficient R-H has been studied in Ca and oxygen co-doped Y1-xCaxBa2Cu3O, systems. R-H is not altered by pressure in samples without a Cu-O chain, whereas samples with an oxygen-deficient chain are altered in response to pressure, thus demonstrating the contribution of the oxygen reordering effect. However, even in samples with full chain ordering. R-H changes at a rate of -8.3%/GPa. This suggests the contribution of internal strain due to the presence of a Cu-O chain structure. We independently estimated the effect of two factors, oxygen reordering and internal strain, on the pressure effect on R-H. The oxygen-content dependence of the pressure effect on R-H can be explained by competition between oxygen reordering and internal strain.

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  • Competition between oxygen reordering and internal strain for the pressure effect of the Hall coefficient in Y1-xCaxBa2Cu3Oy - art. no. 2125065

    T Honma, M Tanimoto, N Mori

    PHYSICAL REVIEW B   63 ( 21 )   212506-1-212506-4   2001.6

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    The pressure effect on the Hall coefficient R-H has been studied in Ca and oxygen co-doped Y1-xCaxBa2Cu3O, systems. R-H is not altered by pressure in samples without a Cu-O chain, whereas samples with an oxygen-deficient chain are altered in response to pressure, thus demonstrating the contribution of the oxygen reordering effect. However, even in samples with full chain ordering. R-H changes at a rate of -8.3%/GPa. This suggests the contribution of internal strain due to the presence of a Cu-O chain structure. We independently estimated the effect of two factors, oxygen reordering and internal strain, on the pressure effect on R-H. The oxygen-content dependence of the pressure effect on R-H can be explained by competition between oxygen reordering and internal strain.

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  • Pressure-induced superconducting phase separation in oxygen-doped La2-xSrxCuO4+delta

    B Lorenz, ZG Li, T Honma, PH Hor

    FRONTIERS OF HIGH PRESSURE RESEARCH II: APPLICATION OF HIGH PRESSURE TO LOW-DIMENSIONAL NOVEL ELECTRONIC MATERIALS   48   371 - 382   2001

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    The pressure effect on the superconducting transitions in La2-xSrxCuO4+delta is investigated by ac susceptibility measurements up to 2 GPa. Two series of samples with x=0 and x=0.015 and 0&lt;delta&lt;0.11 are compared with respect to the ambient and high pressure properties. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total hole concentration (Sr- and oxygen doping contribute to the total carrier density, p). A single superconducting transition (T(c)approximate to30 K) for p&lt;0.085 splits into two transitions (T(c)approximate to15 K and 30 K) at higher hole density indicating that electronic phase separation sets in above p=0.085. The pressure effect on T-c of the 3 0 K transition is unusually large, dT(c)((30))/dPapproximate to10 K/GPa. The electronic phase separation at higher hole density is enhanced by pressure and T-c of the 15 K superconducting state exhibits a negative Pressure shift, dT(c)((15))/dPapproximate to-4 K/GPa. At a hole density close to 0.085 the electronic phase separation into the two superconducting states can be induced by pressure. The results are interpreted in terms of a strong correlation of the hole system and the interstitial (mobile) oxygen ions. Pressure, applied at ambient temperature, causes a redistribution of holes and oxygen and enhances superconductivity (T-c) as well as the tendency to phase separation.

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  • Pressure-induced superconducting phase separation in oxygen-doped La2-xSrxCuO4+delta

    B Lorenz, ZG Li, T Honma, PH Hor

    FRONTIERS OF HIGH PRESSURE RESEARCH II: APPLICATION OF HIGH PRESSURE TO LOW-DIMENSIONAL NOVEL ELECTRONIC MATERIALS   48   371 - 382   2001

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    The pressure effect on the superconducting transitions in La2-xSrxCuO4+delta is investigated by ac susceptibility measurements up to 2 GPa. Two series of samples with x=0 and x=0.015 and 0&lt;delta&lt;0.11 are compared with respect to the ambient and high pressure properties. At ambient pressure both sets of samples fit into the same phase diagram as a function of the total hole concentration (Sr- and oxygen doping contribute to the total carrier density, p). A single superconducting transition (T(c)approximate to30 K) for p&lt;0.085 splits into two transitions (T(c)approximate to15 K and 30 K) at higher hole density indicating that electronic phase separation sets in above p=0.085. The pressure effect on T-c of the 3 0 K transition is unusually large, dT(c)((30))/dPapproximate to10 K/GPa. The electronic phase separation at higher hole density is enhanced by pressure and T-c of the 15 K superconducting state exhibits a negative Pressure shift, dT(c)((15))/dPapproximate to-4 K/GPa. At a hole density close to 0.085 the electronic phase separation into the two superconducting states can be induced by pressure. The results are interpreted in terms of a strong correlation of the hole system and the interstitial (mobile) oxygen ions. Pressure, applied at ambient temperature, causes a redistribution of holes and oxygen and enhances superconductivity (T-c) as well as the tendency to phase separation.

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  • Pressure induced superconductivity in Y0.83Ca0.17Ba2Cu3O6

    T Honma, PH Hor

    PHYSICA C   341   521 - 522   2000.11

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    In Y0.83Ca0.17Ba2Cu3O6 two superconducting transitions have been observed under high pressure; the pressure-induced superconductivity at the lower-T and the pressure-enhanced one at the higher-T. The former is the filamentary superconductivity induced by pressure. The origin of the latter is attributed to the charge redistribution induced by pressure.

    DOI: 10.1016/S0921-4534(00)00572-4

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  • Superconductivity and charge redistribution under high pressure in the underdoped La1.916Sr0.084CuO4

    T Honma, B Lorenz, ZG Li, PH Hor

    PHYSICA C   341 ( 1933 )   1933 - 1934   2000.11

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    Unusual pressure-induced broadening of superconducting transition was observed in La1.916Sr0.084CuO4 without excess oxygen by ac resistance measurement (acR) and mutual inductance measurement (acM). Above similar to 9kbar, a negative dT(c)/dP determined by acM and a positive dT(c)/dP determined by acR are observed, while below similar to 9 kbar, both dT(c)/dP are positive in sign and identical in magnitude. This suggests the occurrence of the intralayer charge redistribution induced by pressure.

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  • Superconductivity in Ca-doped Pr-123 system

    ZX Zhao, KQ Li, GC Che, T Honma, PH Hor

    PHYSICA C   341 ( 331 )   331 - 334   2000.11

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    In this report, Ca-doped Pr-123 compounds have been synthesized under high pressure and the highest T-c up to 115K is achieved in Pr0.5Ca0.5Ba2Cu3Oy According to the X-ray analysis and thermal-electric power data, the Ca-ions induced carriers and reduced occupation of Pr ion in Ba site. These two effects could be the reason for the occurrence of superconductivity with higher T-c. Also, magnetic susceptibility under high pressure has been carried out by ac mutual inductance measurements. It showed that T-c increased linearly with pressure at dT(c)/dP =-+0.10 K/kbar up to 20 kbar. The pressure effect could be explained by carrier increase due to the shorter distance between Ca ion and CuO2 plane.

    DOI: 10.1016/S0921-4534(00)00504-9

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  • Superconductivity in Ca-doped Pr-123 system

    ZX Zhao, KQ Li, GC Che, T Honma, PH Hor

    PHYSICA C   341   331 - 334   2000.11

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    In this report, Ca-doped Pr-123 compounds have been synthesized under high pressure and the highest T-c up to 115K is achieved in Pr0.5Ca0.5Ba2Cu3Oy According to the X-ray analysis and thermal-electric power data, the Ca-ions induced carriers and reduced occupation of Pr ion in Ba site. These two effects could be the reason for the occurrence of superconductivity with higher T-c. Also, magnetic susceptibility under high pressure has been carried out by ac mutual inductance measurements. It showed that T-c increased linearly with pressure at dT(c)/dP =-+0.10 K/kbar up to 20 kbar. The pressure effect could be explained by carrier increase due to the shorter distance between Ca ion and CuO2 plane.

    DOI: 10.1016/S0921-4534(00)00504-9

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  • Superconductivity and charge redistribution under high pressure in the underdoped La1.916Sr0.084CuO4

    T Honma, B Lorenz, ZG Li, PH Hor

    PHYSICA C   341   1933 - 1934   2000.11

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    Unusual pressure-induced broadening of superconducting transition was observed in La1.916Sr0.084CuO4 without excess oxygen by ac resistance measurement (acR) and mutual inductance measurement (acM). Above similar to 9kbar, a negative dT(c)/dP determined by acM and a positive dT(c)/dP determined by acR are observed, while below similar to 9 kbar, both dT(c)/dP are positive in sign and identical in magnitude. This suggests the occurrence of the intralayer charge redistribution induced by pressure.

    DOI: 10.1016/S0921-4534(00)01396-4

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  • Pressure induced superconductivity in Yo.<sub>83</sub>Cao.<sub>17</sub> Ba<sub>2</sub>Cu<sub>3</sub>O<sub>6</sub>

    Physica C   341-348 ( 521 )   2000

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  • Pressure Effect on Hall Coefficient in High-Tc Superconductor Y1-xCaxBa2Cu3Oy System with and without Cu-O Chain Structure

    T. Honma, M. Tanimoto, N. Môri

    Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu   7   580 - 582   1998

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    Pressure effect on Hall coefficient, RH has been investigated in Y1-xCaxBa2Cu3Oy system with and without Cu-O chain structure, which is known as a charge reservoir. In the samples with Cu-O chain (y≠6), it was found that RH changes by pressure. But, in the samples without Cu-O chain (y=6), it was found that RH does not change by pressure. It is concluded that a source of the pressure-induced mobile carrier is the Cu-O chain structure in Y1-xCaxBa2Cu3Oy system. [high-Tc superconductor, Hall coefficient, Cu-O chain structure, oxygen-content, lattice parameter]. © 1998, The Japan Society of High Pressure Science and Technology. All rights reserved.

    DOI: 10.4131/jshpreview.7.580

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  • Pressure Effect on Hall Coefficient in High-Tc Superconductor Y1-xCaxBa2Cu3Oy System with and without Cu-O Chain Structure

    T. Honma, M. Tanimoto, N. Môri

    Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu   7   580 - 582   1998

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    Pressure effect on Hall coefficient, RH has been investigated in Y1-xCaxBa2Cu3Oy system with and without Cu-O chain structure, which is known as a charge reservoir. In the samples with Cu-O chain (y≠6), it was found that RH changes by pressure. But, in the samples without Cu-O chain (y=6), it was found that RH does not change by pressure. It is concluded that a source of the pressure-induced mobile carrier is the Cu-O chain structure in Y1-xCaxBa2Cu3Oy system. [high-Tc superconductor, Hall coefficient, Cu-O chain structure, oxygen-content, lattice parameter]. © 1998, The Japan Society of High Pressure Science and Technology. All rights reserved.

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  • A role of the Cu-O chain for the pressure-induced change in the carrier number in Y1-xCaxBa2Cu3Oy system

    T Honma, N Mori, M Tanimoto

    PHYSICA C   282   791 - 792   1997.8

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    Pressure effect on Hall coefficient, R-H was investigated in Y0.9Ca0.1Ba2Cu3Oy (6.72 less than or equal to y less than or equal to 6.98) samples with Cu-O chain structure and Y1-xCaxBa2Cu3Oy (y=6) samples without Cu-O chain structure. it is found that the Cu-O chain structure is a source of the pressure-induced mobile carrier.

    DOI: 10.1016/S0921-4534(97)00415-2

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  • Change in the carrier number by Ca doping and pressure in Y<sub>1-X</sub> Ca<sub>X</sub> Ba<sub>2</sub> Cu<sub>3</sub> Oy system

    Advances in Superconductivity IX   9   253   1997

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  • A role of the Cu-O chain for the pressure-induced change in the carrier number in Y1-xCaxBa2Cu3Oy system

    T. Honma, N. Môri, M. Tanimoto

    Physica C: Superconductivity and its Applications   282-287 ( 2 )   791 - 792   1997

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    Pressure effect on Hall coefficient, RH was investigated in Y0.9Ca0.1Ba2Cu3Oy (6.72≤y≤6.98) samples with Cu-O chain structure and Y1-xCaxBa2Cu3Oy (y=6) samples without Cu-O chain structure. It is found that the Cu-O chain structure is a source of the pressure-induced mobile carrier.

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  • Effects of oxygen doping and pressure on superconducting transition temperature in Y0.9Ca0.1Ba2Cu3Oy

    T Honma, K Yamaya, N Mori, M Tanimoto

    SOLID STATE COMMUNICATIONS   98 ( 5 )   395 - 399   1996.5

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    The dependence of the superconducting transition temperature Tc On the Hall number was systematically investigated by changing the oxygen content and pressure in Y0.9Ca0.1Ba2Cu3O(3). It was determined that the change in Tc due to pressure, Delta Tc, can be expressed by sum of two terms, (Delta Tc)c and (Delta Tc)p, where (Delta Tc)c is the change in Tc due to pressure-induced change in carrier density and (Delta Tc)p is the change in Tc due to pressure-enhanced electron pairing. The contribution of (Delta Tc)c to Delta Tc increases with decreasing oxygen content. This result is discussed in terms of whether oxygen atoms in the carrier reservoir can be easily moved by changing the temperature and/or pressure.

    DOI: 10.1016/0038-1098(96)00071-3

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  • Change in the carrier number by Ca doping and pressure in Y1-xCaxBa2Cu3Oy system Reviewed

    T. Honma, K. Yamaya, N. Môri, M. Tanimoto

    Advances in Superconductivity IX   IX pp.253~256   253 - 256   1996.4

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  • Effects of oxygen doping and pressure on superconducting transition temperature in Y0.9Ca0.1Ba2Cu3Oy

    T. Honma, K. Yamaya, N. Môri, M. Tanimoto

    Solid State Communications   98 ( 5 )   395 - 399   1996

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    The dependence of the superconducting transition temperature Tc on the Hall number was systematically investigated by changing the oxygen content and pressure in Y0.9Ca0.1Ba2Cu3Oy. It was determined that the change in Tc due to pressure, ΔTc, can be expressed by sum of two terms, (ΔTc)c and (ΔTc)p, where (ΔTc)c is the change in Tc due to pressure-induced change in carrier density and (ΔTc)P is the change in Tc due to pressure-enhanced electron pairing. The contribution of (ΔTc)c to ΔTc increases with decreasing oxygen content. This result is discussed in terms of whether oxygen atoms in the carrier reservoir can be easily moved by changing the temperature and/or pressure.

    DOI: 10.1016/0038-1098(96)00071-3

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  • Pressure effect on Hall coefficient of Y<sub>1-X</sub> Ca<sub>X</sub> Ba<sub>2</sub> Cu<sub>3</sub> O<sub>6</sub> without Cu-O Chain

    Czechoslovak Journal of Physics   46   1391   1996

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  • Pressure effect on Hall coefficient of Y1-xCaxBa2Cu3O6 without Cu-O chain

    T Honma, K Yamaya, N Mori, M Tanimoto

    CZECHOSLOVAK JOURNAL OF PHYSICS   46   1391 - 1392   1996

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    Pressure effect on Hall coefficient RH was investigated in Y1-xCaxBa2Cu3O6 (x=0.15 and 0.20) without Cu-O chain. No change in RH was observed under pressure up to 12kbar; no pressure-induced change occurs in the carrier density. The pressure-induced change in the carrier density does not occur when the oxygen atoms in the Cu-O chain is hard to displace by annealing or applying pressure.

    DOI: 10.1007/BF02562810

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  • DEPENDENCES OF HALL-COEFFICIENT AND SUPERCONDUCTING TRANSITION-TEMPERATURE ON OXYGEN-CONTENT AND PRESSURE IN Y0.9CA0.1BA2CU3OY

    T HONMA, K YAMAYA, N MORI, M TANIMOTO

    PHYSICA C   235   1457 - 1458   1994.12

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    Hall coefficient R(H) and superconducting transition temperature T-c in Y0.9Ca0.1Ba2Cu3Oy with 6.59 less than or equal to y less than or equal to 7.01 have been measured under ambient pressure and under high pressure up to 2GPa. It is found that the relation of T-c and Hall number 1/eR(H) under high pressure is explained in terms of the change in the carrier density and the pressure-induced pairing effect which depends on the oxygen-content.

    DOI: 10.1016/0921-4534(94)91953-4

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  • DEPENDENCES OF HALL-COEFFICIENT AND SUPERCONDUCTING TRANSITION-TEMPERATURE ON OXYGEN-CONTENT AND PRESSURE IN Y0.9CA0.1BA2CU3OY

    T HONMA, K YAMAYA, N MORI, M TANIMOTO

    PHYSICA C   235 ( Pt 2 )   1457 - 1458   1994.12

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    Hall coefficient R(H) and superconducting transition temperature T-c in Y0.9Ca0.1Ba2Cu3Oy with 6.59 less than or equal to y less than or equal to 7.01 have been measured under ambient pressure and under high pressure up to 2GPa. It is found that the relation of T-c and Hall number 1/eR(H) under high pressure is explained in terms of the change in the carrier density and the pressure-induced pairing effect which depends on the oxygen-content.

    DOI: 10.1016/0921-4534(94)91953-4

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  • Transport properties in high-Tc superconductors investigated by a two-bnand model

    Jpn. J. Appl.Phys.   series, 7(edited by Y. Muto) pp.231~235   1992

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  • PROPERTIES OF TRANSPORT CARRIERS IN Y1-XCAXBA2CU3OY AND TL2BA2CUOY

    T HONMA, K YAMAYA

    PHYSICA C   185   1245 - 1246   1991.12

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    Resistivity and Hall coefficient of Y1-xCaxBa2Cu3Oy (YCBCO) were measured and analyzed by a simple two-carrier model involving holes and electrons. The experimental results are reproduced well, and the carrier concentration and mobility estimated from the model are reasonable values in physics. The data of Tl2Ba2CuOy measured by Kubo et al. also were analyzed by the same model and the result was compared with that of YCBCO. In both systems, the properties of electron carrier remarkably change for hole-doping compared with those of hole carrier.

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  • TEMPERATURE DEPENDENCES OF ANISOTROPIC RESISTIVITY IN THE A-B PLANE AND HALL-COEFFICIENT IN A SINGLE-CRYSTAL BI2SR2CACU2OY

    T HONMA, K YAMAYA, F MINAMI, S TAKEKAWA

    PHYSICA C   176 ( 1-3 )   209 - 215   1991.5

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    The anisotropic resistivity in the a-b plane and Hall coefficient have been measured in a single-crystal Bi2Sr2CaCu2O(y) (BSCCO) and their temperature dependences have been analyzed by a two-band model involving holes and electrons. It is confirmed that the calculated values of the resistivities and Hall coefficient reproduce well the data and the carrier concentrations, mobilities and mean-free-paths obtained from the model are reasonable values in physics. It is found that the hole concentration is smaller than the electron one, but the hole mobility is larger than the electron one. The transport properties of BSCCO are discussed in terms of two types of the hole and electron carrier.

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  • TEMPERATURE DEPENDENCES OF ANISOTROPIC RESISTIVITY IN THE A-B PLANE AND HALL-COEFFICIENT IN A SINGLE-CRYSTAL BI2SR2CACU2OY

    T HONMA, K YAMAYA, F MINAMI, S TAKEKAWA

    PHYSICA C   176 ( 1-3 )   209 - 215   1991.5

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    The anisotropic resistivity in the a-b plane and Hall coefficient have been measured in a single-crystal Bi2Sr2CaCu2O(y) (BSCCO) and their temperature dependences have been analyzed by a two-band model involving holes and electrons. It is confirmed that the calculated values of the resistivities and Hall coefficient reproduce well the data and the carrier concentrations, mobilities and mean-free-paths obtained from the model are reasonable values in physics. It is found that the hole concentration is smaller than the electron one, but the hole mobility is larger than the electron one. The transport properties of BSCCO are discussed in terms of two types of the hole and electron carrier.

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  • The properties of normal carriers in Bi2Sr2CaCu2Oy

    Advances in Superconductivity   III pp.117~120   1991

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  • TRANSPORT-PROPERTIES AND ION CHANNELING IN SINGLE-CRYSTALS OF HIGH-TC OXIDES

    K YAMAYA, T HAGA, T HONMA, Y ABE, F MINAMI, S TAKEKAWA, Y TAJIMA, Y HIDAKA

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   162   1009 - 1010   1989.12

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  • TRANSPORT-PROPERTIES AND ION CHANNELING IN SINGLE-CRYSTALS OF HIGH-TC OXIDES

    K YAMAYA, T HAGA, T HONMA, Y ABE, F MINAMI, S TAKEKAWA, Y TAJIMA, Y HIDAKA

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   162   1009 - 1010   1989.12

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  • 31p-PS-11 Anisotoropic Hall Cofficient of Single Crystal Bi_<2.2>Sr_<1.8>Ca_1Cu_2O_y

    Honma T., Yamaya K., Minami F., Takekawa S.

    44 ( 3 )   252 - 252   1989.3

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

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Presentations

  • Improved Electronic Phase Diagram For Bi2Sr2CaCu2O8 International conference

    Tatsuya Honma

    第13回超伝導国際会議 

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    Event date: 2022.7

    Language:English   Presentation type:Poster presentation  

    Venue:Vancouver, Canada  

    https://www.m2s-2022.com/

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  • Topographic Origin of the Pseudogap in Hole-Doped High-temperature Cuprate Superconductors International conference

    Tatsuya Honma, Pei-Herng hor

    The 11th International Conference on Materials & Mechanisms of Superconductivity 

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    Event date: 2015.8

    Language:English   Presentation type:Poster presentation  

    Venue:CICG Geneva, Switzerland  

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  • Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors International conference

    T. Honma, P.-H. Hor

    第10回超伝導国際会議 

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    Event date: 2012.7 - 2012.8

    Language:English   Presentation type:Poster presentation  

    Venue:Washington D.C. (USA)  

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  • Comparison of the Hole Concentration determined by transport measurements International conference

    T. Honma, P.-H. Hor

    第9回超伝導国際会議 

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    Event date: 2009.9

    Language:English   Presentation type:Poster presentation  

    Venue:Tokyo (Japan)  

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  • Comparison of the Hole Concentration determined by Transport Measurements for the High-Tc Superconducting Cuprates

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    Event date: 2009.4

    Language:Japanese   Presentation type:Poster presentation  

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  • Intrinsic electronic superconducting phases at 60 K and 90 K in double-layer YBa2Cu3O6+δ

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    Event date: 2007.9

    Language:Japanese   Presentation type:Poster presentation  

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  • Planar hole-doping concentration and effective three-dimentional hole-doping concentration for single-layer high-Tc superconductors

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    Event date: 2006.9

    Language:Japanese   Presentation type:Poster presentation  

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  • Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-Tc superconductors International conference

    T. Honma, P.-H. Hor

    第8回超伝導国際会議 

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    Event date: 2006.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Dresden (Germany)  

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  • A Universal Intrinsic Scale of Hole Concentration for High-Tc Cuprates

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    Event date: 2004.4

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Pseudogap and Superconductivity on A Common Scale of Hole Concentration for High-Tc Superconductors International conference

    T. Honma, P.-H. Hor

    第7回超伝導国際会議 

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    Event date: 2003.5

    Language:English   Presentation type:Poster presentation  

    Venue:Rio de Janeiro (Brazil)  

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  • Critical temperature oscillation in the thermal cycle below 16 K in Y0.83Ca0.17Ba2Cu3O6

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    Event date: 2002.9

    Language:Japanese   Presentation type:Poster presentation  

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  • Critical temperature oscillation in the thermal cycle below 16 K in Y0.83Ca0.17Ba2Cu3O6 International conference

    T. Honma, P.-H. Hor

    第23回低温物理国際会議 

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    Event date: 2002.8

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima (Japan)  

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  • チェイン構造を持たないY0.83Ca0.17Ba2Cu3O6での 超伝導転移温度の圧力履歴効果

    本間龍也, 谷本光穂, P.H. ホー

    日本物理学会第56回年次大会 

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    Event date: 2001.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:八王子市  

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  • Superconductivity in Ca-doped Pr-123 system International conference

    Z.X. Zhao, K.Q. Li, G.C. Che, T. Honma, P.H. Hor

    第6回超伝導国際会議 

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    Event date: 2000.2

    Language:English   Presentation type:Poster presentation  

    Venue:Houston (USA)  

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  • Pressure induced superconductivity in Y0.83Ca0.17Ba2Cu3O6 International conference

    T. Honma, P.-H. Hor

    第6回超伝導国際会議 

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    Event date: 2000.2

    Language:English   Presentation type:Poster presentation  

    Venue:Houston (USA)  

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  • Superconductivity and charge redistribution under high pressure in the underdoped La1.916Sr0.084CuO4 International conference

    T. Honma, B. Lorenz, Z.G. Li, P.H. Hor

    第6回超伝導国際会議 

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    Event date: 2000.2

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    Venue:Houston (USA)  

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  • Cu-O鎖構造を持たないY1-xCaxBa2Cu3Oy(y=6)の輸送現象のCa置換効果と圧力効果

    本間龍也, 毛利信男, 谷本光穂

    日本物理学会1998年第53回年次大会 

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    Event date: 1998.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:船橋市  

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  • Y1-xCaxBa2Cu3Oy系でのホール係数の圧力効果とCuO鎖構造

    本間龍也, 山谷和彦

    日本物理学会1997年秋の分科会 

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    Event date: 1997.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:神戸市  

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  • Pressure effect on Hall coefficient in high-Tc superconductor Y1-xCaxBa2Cu3Oy system with and without Cu-O chain structure International conference

    T. Honma, N. Môri, M. Tanimoto

    第16回高圧力国際会議 

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    Event date: 1997.8

    Language:English   Presentation type:Poster presentation  

    Venue:京都市  

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  • A role of the Cu-O chain for the pressure-induced change in the carrier number in Y1-xCaxBa2Cu3Oy system International conference

    T. Honma, N. Môri, M. Tanimoto

    第5回超伝導国際会議 

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    Event date: 1997.2 - 1997.3

    Language:English   Presentation type:Poster presentation  

    Venue:Beijing (China)  

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  • Change in the carrier number by Ca doping and pressure in Y1-xCaxBa2Cu3Oy system International conference

    T. Honma, K. Yamaya, N. Môri, M. Tanimoto

    第9回国際超伝導会議 

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    Event date: 1996.10

    Language:English   Presentation type:Poster presentation  

    Venue:札幌市  

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  • Pressure effect on Hall coefficient of Y1-xCaxBa2Cu3O6 without Cu-O chain International conference

    T. Honma, K. Yamaya, N. Môri, M. Tanimoto

    第21回低温物理国際会議 

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    Event date: 1996.8

    Language:English   Presentation type:Poster presentation  

    Venue:Prague (Czech)  

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  • Y0.9Ca0.1Ba2Cu3Oyにおける圧力による超伝導転移温度の変化

    本間龍也, 山谷和彦

    日本物理学会1995年秋の分科会 

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    Event date: 1995.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:堺市  

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  • Dependence of Hall coefficient and superconducting transition temperature on oxygen content and pressure in Y0.9Ca0.1Ba2Cu3Oy International conference

    T. Honma, K. Yamaya, N. Môri, M. Tanimoto

    第4回超伝導国際会議 

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    Event date: 1994.7

    Language:English   Presentation type:Poster presentation  

    Venue:Grenoble (France)  

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  • Transport properties in Y0.9Ca0.1Ba2Cu3Oy investigated by a simple two-carrier model International conference

    T. Honma, K. Yamaya

    第4回超伝導国際会議 

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    Event date: 1994.7

    Language:English   Presentation type:Poster presentation  

    Venue:Grenoble (France)  

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  • 酸化物高温超伝導体の電子輸送現象の温度依存性II -2キャリアモデルによる解析―

    本間龍也, 山谷和彦

    日本物理学会1993年第48回年次大会 

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    Event date: 1993.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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Research Projects

  • Mechanism of High-Temperature Cuprate Superconductors International coauthorship

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  • 平成10年度伊藤医薬学術交流財団海外留学研究等の助成金

    伊藤医薬学術交流財団 

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    Grant type:Competitive

    Grant amount:\300,000

    高温超伝導体の高圧下での研究
    (米国ヒューストン大学テキサス超伝導センター)

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  • 平成8年度伊藤医薬学術交流財団海外留学研究等の助成金

    伊藤医薬学術交流財団 

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    Grant type:Competitive

    Grant amount:\300,000

    第21回低温物理国際会議での研究発表のため。
    研究テーマ;Y1-xCaxBa2Cu3O6のホール濃度の圧力効果

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Social Activities

  • 平成23年度サイエンス・パートナーシップ・プロジェクト事業での実施責任者、講演者 (水を使って大気圧を測ってみよう)

    2011.10

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  • 平成21年度サイエンス・パートナーシップ・プロジェクト事業での実施責任者、講演者 (医療をささえる自然科学)

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    2006.4

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